 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2. Features D D D D D D D Three photodiodes with common cathode Fast response times Small junction capacitance High photo sensitivity Large radiant sensitive area (A = 3 x 7.5 mm2) Wide angle of half sensitivity = 65 Suitable for visible and near infrared radiation 94 8684 Applications High speed and high sensitive PIN photodiode array for industrial applications, measuring and control Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 -55...+100 260 350 Unit V mW C C C K/W x 25 C t 3 s, mounted on plated, printed board x Document Number 81538 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) S268P Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current g Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2 Ee = 1 mW/cm2 EA = 1 klx Ee = 1 mW/cm2, l = 950 nm EA = 1 mW/cm2, l = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Symbol V(BR) Iro CD CD Vo TKVo Ik Ik TKIk Ira Ira Min 60 Typ 2 70 25 350 -2.6 70 47 0.1 75 50 1:1.2 Max 30 40 Unit V nA pF pF mV mV/K mA mA mA mA %/K 40 Reverse Light Current Ratio of Two Diodes Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power VR = 10 V, l = 950 nm Rise Time VR = 10 V, RL = 1 kW, l = 820 nm Fall Time VR = 10 V, RL = 1 kW, l = 820 nm lp l0.5 NEP tr tf 65 900 600...1050 4x10-14 100 100 deg nm nm W/ Hz ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4 1.2 100 l=950nm VR=5V 1.0 10 0.8 VR=10V 1 20 40 60 80 100 0.6 0 94 8416 20 40 60 80 100 94 8403 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81538 Rev. 2, 20-May-99 S268P Vishay Telefunken 1000 Ira - Reverse Light Current ( m A ) CD - Diode Capacitance ( pF ) 80 E=0 f=1MHz 60 100 10 40 1 VR=5V l=950nm 20 0.1 0.01 94 8417 0 0.1 1 10 94 8407 0.1 1 10 100 Ee - Irradiance ( mW / cm2 ) VR - Reverse Voltage ( V ) Figure 3. Reverse Light Current vs. Irradiance 1000 Ira - Reverse Light Current ( m A ) Figure 6. Diode Capacitance vs. Reverse Voltage S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 350 100 10 VR=5V 1 0.1 101 94 8418 102 103 104 94 8420 550 750 950 1150 EA - Illuminance ( lx ) l - Wavelength ( nm ) Figure 4. Reverse Light Current vs. Illuminance 100 Ira - Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2 Figure 7. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 l=950nm 1 0.1 94 8419 1 10 100 94 8406 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 5. Reverse Light Current vs. Reverse Voltage Figure 8. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81538 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) S268P Vishay Telefunken n.c. 8 C 7 C 6 C 5 D1 D2 D3 94 8683 1 C 2 AD1 3 AD2 4 AD3 Dimensions in mm 96 12185 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81538 Rev. 2, 20-May-99 S268P Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81538 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
Price & Availability of S268P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |